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K9F4G08U0E-SIB0 اورجینال

SAMSUNG 334 K9F4G08U0E-SIB0
ای سی حافظه نند فلش 4 گیگا بیت/512 مگابایت 4Gb E-die NAND Flash اورجینال
تعداد
تخفیف
قیمت
+1
5.0 %
453,900 تومان 431,200 تومان
+5
5.9 %
449,500 تومان 427,000 تومان
+10
6.9 %
445,100 تومان 422,800 تومان
+20
7.8 %
440,600 تومان 418,600 تومان
برند: Samsung پکیج: TSOP PIN-48 ابعاد: 0.05x2x1.2 دیتاشیت

نقد و بررسی اجمالی

ای سی حافظه نند فلش 4 گیگا بیت/512 مگابایت 4Gb E-die NAND Flash اورجینال

 

 دریافت دیتا شیت

Features

Voltage Supply: - 3.3V Device(K9F4G08U0E) : 2.7V ~ 3.6v 

 Organization: - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

 Automatic Program and Erase: - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

 Page Read Operation: - Page Size : (2K + 64)Byte - Random Read : 40

s(Max.) - Serial Access : 25ns(Min

 Fast Write Cycle Time: - Page Program time : 400us

  Block Erase Time : 4.5ms

 Command/Address/Data Multiplexed I/O Port

 Hardware Data Protection - Program/Erase Lockout During Power Transitions

 Reliable CMOS Floating-Gate Technology - ECC Requirement : Please refer to the qualification report - Endurance & Data Retention : Please refer to the qualification report

 Command Register Operation

 Unique ID for Copyright Protection

( Package : - K9F4G08U0E-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE 48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch

Description

Offered in 512Mx8bit, the K9F4G08U0E is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400s on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0Es extended reliability of TBD program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility

مشخصات:

مشخصات - پارامترها

مقادیر

خانواده

حافظه

سری

NAND FLASH

تعداد پین

48

پکیج

TSOP-1

ولتاژکاری

2.7-3.6V

جریان کاری

5-15-30mA

ظرفیت حافظه

4Bbit

فرکانس کاری

-

پروتکل ارتباطی

PARALLEL

(WP(Write Protect

دارد

ابعاد

12.40X20.0X1.20mm

دمای کاری

125+~40-

برند

Samsung

کشور سازنده

-

کیفیت

ارجینال 
نوع مونتاژ SMD

ویژگی خاص

-

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