ای سی حافظه 16 مگابیت ، 2مگا بیت ،نور فلش 16Mbit NOR Flash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory اورجینال
Features
Single 2.3V - 3.6V or 2.5V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS™ operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15MHz
Clock-to-output time (tV) of 6ns maximum
User configurable page size
512 bytes per page
( 528 bytes per page (default
Page size can be factory pre-configured for 512 bytes
( Two fully independent SRAM data buffers (512/528 bytes
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 512/528 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
( Page Erase (512/528 bytes
( Block Erase (4KB
( Sector Erase (128KB
( Chip Erase (16-Mbits
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
( 400nA Ultra-Deep Power-Down current (typical
( 3µA Deep Power-Down current (typical
( 25µA Standby current (typical
( 7mA Active Read current (typical @ 15 MHz
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
( 8-lead SOIC (0.150" wide and 0.208" wide
( 8-pad Ultra-thin DFN (5 x 6 x 0.6mm
( 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm
11-ball Wafer Level Chip Scale Package
Die in Wafer Form
Description
The Adesto® AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports the RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2 PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the Adesto DataFlash® uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. To allow for simple in-system re-programmability, the AT45DB161E does not require high input voltages for programming. The device operates from a single 2.3V to 3.6V or 2.5V to 3.6V power supply for the erase and program and read operations. The AT45DB161E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming and erase cycles are self-timed.
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