SCR گیت تحریک 600 ولت 8 آمپر 0.8 AMPERES RMS 200 thru 600 VOLTS
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
Features
• Sensitive Gate Trigger Current
• Blocking Voltage to 600 V
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• Pb−Free Packages are Available
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 500V,20A MOSFET,TO-3P ماسفت قدرت 500 ولت 20 آمپر توشیبا ژاپن
23A,250V, 0.14 Ohm, N-Channel HEXFET® Power MOSFET ماسفت قدرت N کانال 250 ولت 23 آمپر RDS(on) = 0.14
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