ای جی بی تی 40 آمپر 600 ولت ST اورجینا/ دیود هرزگرد سریع فرکانس IGBT Trench Field Stop 600 V 80 A 283 W Through Hole TO-247-3
استفاده در انواع صنایع مختلف از جمله :
دستگاه جوش
پاور فاکتور
یو پی اس
اینورتر خورشیدی
شارژر
Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers
Description
These devices are IGBTs developed using an advanced proprietary trench gate
field-stop structure. These devices are part of the V series IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
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Category
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Input Type
Standard
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Manufacturer
STMicroelectronics
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Gate Charge
226 nC
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Packaging
Tube
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Td (on/off) @ 25°C
52ns/208ns
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Part Status
Active
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Test Condition
400V, 40A, 10Ohm, 15V
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IGBT Type
Trench Field Stop
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Reverse Recovery Time (trr)
41 ns
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Voltage - Collector Emitter Breakdown (Max)
600 V
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Operating Temperature
-55°C ~ 175°C (TJ)
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Current - Collector (Ic) (Max)
80 A
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Mounting Type
Through Hole
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Current - Collector Pulsed (Icm)
160 A
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Package / Case
TO-247-3
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Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
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Supplier Device Package
TO-247-3
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Power - Max
283 W
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Base Product Number
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Switching Energy
456µJ (on), 411µJ (off)
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مقاومت سرامیکی - مقاومت آجری ۱ کیلو اهم 10 وات 1K10W 1K
مقاومت5 % کربنی 1 وات
آیسی درایور ماسفت یا IGBT قسمت بالا و پایین 200V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs
دیود فست 600 ولت 80 آمپر WXDH چین - کاتد مشترک /Low-Loss Fast Recovery Diode 600V,80A,TO-3P
