ای سی حافظه نند فلش 2 گیگا بیت/256 مگابایت 2Gb C-die NAND Flash اورجینال

 دریافت دیتا شیت

Features

Voltage Supply - 3.3V device(K9F2G08U0C): 2.70V ~ 3.60V 

 Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit

 Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte

 Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 40μs(Max.) - Serial Access

(25ns(Min

Fast Write Cycle Time - Page Program time : 250μs(Typ) - Block Erase Time : 2ms(Typ

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection - Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology -Endurance & Data Retention : Refor to the gualification report -ECC regnirement : 1 bit / 528bytes• Command Driven Operation

Unique ID for Copyright Protection

Package : - K9F2G08U0C-SCB0/SIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)